| PART |
Description |
Maker |
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| AM27X256 AM27X256-120JC AM27X256-120JI AM27X256-12 |
32K X 8 OTPROM, 250 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 70 ns, PQCC32
CMOS Dual Monostable Multivibrator 16-PDIP -55 to 125 32K X 8 OTPROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 120 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 120 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 55 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device 32K X 8 OTPROM, 250 ns, PQCC32
CMOS Analog Multiplexer/Demultiplexer 24-TSSOP -55 to 125
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| M68AW031A M68AW031AM70NS6U |
256 KBIT (32K X8) 3.0V ASYNCHRONOUS SRAM
256 Kbit (32K x8) 3.0V Asynchronous SRAM
CAC 6C 6#16S PIN PLUG
|
ST Microelectronics
意法半导
|
| HM62W16255HI HM62W16255HJPI-15 HM62W16255HTTI-15 H |
High-Speed SRAMs
4M High Speed SRAM (256-kword x 16-bit)
|
HITACHI[Hitachi Semiconductor]
|
| IDT70V9079L15PF IDT70V9079L15PFI IDT70V9089L15PF I |
32K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
Small Signal Diode; Package: DO-35; No of Pins: 2; Container: Bulk
64K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
|
SRAM
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| 709179L12PF IDT709179L 709179L12PFI 709179L7PF 709 |
32K x 9 Sync, Dual-Port SRAM, PipeLined/Flow-Through
HIGH-SPEED 32K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 32K X 9 DUAL-PORT SRAM, 9 ns, PQFP100
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K X 8 STANDARD SRAM, 120 ns, PDSO28
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
